By A. Mukherjee
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Extra resources for Advanced Microwave, Millimeter Wave Technols - Devs, Circs, Systs
Exploiting the semiconductor-metal phase transition of VO2 materials: a novel direction towards tuneable devices and systems for RFmicrowave applications 35 x3 Exploiting the semiconductor-metal phase transition of VO2 materials: a novel direction towards tuneable devices and systems for RF-microwave applications Crunteanu Aurelian1, Givernaud Julien1, Blondy Pierre1, Orlianges Jean-Christophe2, Champeaux Corinne2 and Catherinot Alain2 1XLIM, 2SPCTS, CNRS/ Université de Limoges CNRS/ Université de Limoges France 1.
On Fig. 6 is presented a typical hysteresys cycle of film’s reflectivity (heatingcooling cycle). The VO2 films showed a very sharp, abrupt phase transition that occurs 42 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems irrespective of the used substrate or of their thickness. As in the case of the electrical resistivity measurements, the width of the hysteresys curve is very small. Fig. 6. Hysteresis cycle of reflectivity (at 1550 nm) vs. temperature for a 75-nm thick VO2 film made by PLD on C-type sapphire substrate showing the sharp phase transition of the VO2 material.
2002). Physical aspects of shaped charge and fragmentational warheads. 84 p. Novosibirsk, NSTU. 30. V. (1999). Some new principles of cumulative jet formation. Collection of works NVI (in Russian), Vol. 7, pp. 19-26. Patent SU № 1508938 (1987). V. and et. Devise for plasma jet forming. 31. V. (1992). Analytical and computation experiments on forced plasma jet formation. Proc. of the 2nd Int. Symp. on Intense Dynamic Loading and Its Effects. Chengdu, China, June 9-12, 1992, pp. 588-591. 34 Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems 32.
Advanced Microwave, Millimeter Wave Technols - Devs, Circs, Systs by A. Mukherjee