Home Analysis • Download PDF by J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.): Analysis and Design of Mosfets: Modeling, Simulation and

Download PDF by J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.): Analysis and Design of Mosfets: Modeling, Simulation and

By J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.)

ISBN-10: 1461374731

ISBN-13: 9781461374732

ISBN-10: 1461554152

ISBN-13: 9781461554158

Analysis and layout of MOSFETs: Modeling, Simulation, and ParameterExtraction is the 1st e-book committed solely to a vast spectrum of research and layout matters concerning the semiconductor gadget known as metal-oxide semiconductor field-effect transistor (MOSFET). those concerns contain MOSFET equipment physics, modeling, numerical simulation, and parameter extraction. The dialogue of the applying of gadget simulation to the extraction of MOSFET parameters, akin to the brink voltage, powerful channel lengths, and sequence resistances, is of specific curiosity to all readers and gives a useful studying and reference device for college students, researchers and engineers.
Analysis and layout of MOSFETs: Modeling, Simulation, and ParameterExtraction, largely referenced, and containing greater than a hundred and eighty illustrations, is an cutting edge and indispensable new e-book on MOSFETs layout technology.

Show description

Read Online or Download Analysis and Design of Mosfets: Modeling, Simulation and Parameter Extraction PDF

Best analysis books

Karl-Heinz Pfeffer's Analysis für Fachoberschulen: Ein Lehr- und Arbeitsbuch zur PDF

Das Unterrichtswerk zur research ist ein Lehr- und Arbeitsbuch f? r Fachoberschulen der Klassen 12. Es ber? cksichtigt in besonderem Ma? e die unterschiedlichen mathematischen Vorkenntnisse der Fachobersch? ler und ist didaktisch so aufgebaut, dass es bereits n den eleven. Klassen eingef? hrt werden kann.

A Multidisciplinary Analysis of Controversies in the by H. Ballentine Carter M.D., Donald S. Coffey Ph.D. (auth.), PDF

Those lawsuits emanate from the second one Prouts Neck convention on prostate melanoma hung on October 17-19, 1986, the subject matter of which used to be deal with­ ment, with specialize in present matters and destiny learn that's had to resolution serious questions on the topic of optimum administration of some of the phases of prostate melanoma.

Extra resources for Analysis and Design of Mosfets: Modeling, Simulation and Parameter Extraction

Sample text

50) P1J1)) Here, Lo is thp. 52) where Co is the oxide capacitance and VFB is the flatband voltage, which is defined as the gate voltage at which the energy bands in the semiconductor are flat. A few words are needed to elaborate the relationship between the flatband voltage and the capacitance of the MOSFET. In general, the flatband voltage is a function ofthe work function difference Wms between the gate and silicon, the interface trap charge, and the oxide charge. For the purpose of illustration, let us neglect the effect of interface trap charge and focus on the oxide charge Qox, then V FB = W ms - Qo/Co[29].

60), which can be used to verify the condition of l\1s = 2<1>B at onset of strong inversion derived and used in the previous sections. In Fig. , proportional to exp(ql\1s/2kT». This point is l\1s = 2<1>B' which agrees with the finding given in Sec. 2. Of equal importance to note is the point ofl\1s = B' where weak inversion starts to occur. The MOSFET drain current models for both the strong and weak inversions will be developed in the next section. 45 CHAPTER J. /2kT) -- 1()6 E u ...... 26 : Plot showing the total charge Qs in the surface region as a function of the surface band bending Ijrs for an MOS device with p-type silicon.

61 ) where N A is the p-type doping density in the substrate. , the inversion layer thickness) can be approximated by infinity because the inversion charge is located mainly in the inversion region. 64) 0 where W is the channel width. The tenn oEFjoy depends weakly on x because of the quasi-equilibrium approximation; therefore, oEFjoy '" dEFjdy. 35). , in the lateral or y direction), we obtain CHAPTER 1. 66). 62), we obtain the so-called double-integral expression ofPao-Sah's model [42]: W I D = Iln L.

Download PDF sample

Analysis and Design of Mosfets: Modeling, Simulation and Parameter Extraction by J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.)


by David
4.3

Rated 4.84 of 5 – based on 42 votes

Author:admin